Harmonic-Injection Class-EM/Fn Power Amplifier With Finite DC-Feed Inductance and Isolation Circuit

This article presents the analysis and design of a Class- $\text{E}_{\mathrm {M}}/\text{F}_{\mathrm {n}}$ power amplifier (PA). The high peak switch voltage factor classical {M}}$ PA is reduced by 27.3% through adoption notation="LaTeX">$\text{F}^{-1}$ third-harmonic termination on main circuit, resulting in novel topology called . finite dc-feed inductance enables introduction parameter notation="LaTeX">$k$ , which can be exploited to extend maximum operating frequency PA. idealized current waveforms show that circuit fulfills not only zero switching (ZVS) derivative (ZVDS) conditions as Class-E but also zero-current (ZCS) (ZCDS) notation="LaTeX">$\text{E}^{-1}$ thus minimizing dissipation during OFF-to-ON ON-to-OFF transitions. load-network parameters auxiliary circuits are derived, harmonic-balance simulations performed confirm analytical results. A {M}}/\text{F}_{3,5}$ employing transmission-line load network was designed implemented using GaN HEMTs. constructed delivered drain efficiency 83%, power-added 76%, an output 42.3 dBm at 1.8 GHz.